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Tetra-N-Butylgermane

    • Product Name Tetra-N-Butylgermane
    • Alias Tetra-n-butylgermane
    • Einecs 225-176-7
    • Mininmum Order 1 g
    • Factory Site Tengfei Creation Center,55 Jiangjun Avenue, Jiangning District,Nanjing
    • Price Inquiry admin@sinochem-nanjing.com
    • Manufacturer Sinochem Nanjing Corporation
    • CONTACT NOW
    VTB
    Specifications

    HS Code

    948395

    Chemical Name Tetra-n-butylgermane
    Cas Number 998-17-2
    Molecular Formula C16H36Ge
    Molar Mass 323.10 g/mol
    Appearance Colorless liquid
    Density 0.940 g/cm3
    Boiling Point 287-288 °C
    Melting Point -80 °C
    Refractive Index 1.482
    Flash Point 123 °C
    Solubility In Water Insoluble
    Purity Typically ≥ 98%

    As an accredited Tetra-N-Butylgermane factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.

    Packing & Storage
    Packing Tetra-N-Butylgermane is supplied in a 100 mL amber glass bottle with a secure screw cap, labeled with safety information.
    Shipping Tetra-N-Butylgermane should be shipped in tightly sealed containers, protected from physical damage and moisture. Transport should comply with local, national, and international chemical transport regulations. The package must be clearly labeled, and compatible with organic liquids. Use secure, upright positioning, and store away from sources of ignition during shipping.
    Storage Tetra-N-Butylgermane should be stored in a tightly closed container under an inert atmosphere, such as nitrogen or argon, to prevent moisture and air exposure. Store in a cool, dry, and well-ventilated area away from strong oxidizers, acids, and ignition sources. Keep the container clearly labeled, and avoid storing near incompatible substances. Handle with appropriate personal protective equipment.
    Application of Tetra-N-Butylgermane

    Applications of Tetra-N-Butylgermane in Industrial Manufacturing

    Tetra-N-Butylgermane is a highly specialized organogermanium compound leveraged in advanced materials industries, primarily for its role in precise thin film deposition and next-generation microelectronics fabrication. As a direct manufacturer, we deliver this raw material to key sectors where process reliability, compliance, and consistent quality standards are central to downstream innovation and production yields.

    1. Semiconductor Deposition—High Purity Germanium Thin Films

    Microelectronics manufacturers incorporate Tetra-N-Butylgermane as a critical precursor in chemical vapor deposition (CVD) processes for growing ultra-thin germanium (Ge) films. The compound functions in atomic layer deposition (ALD) and low-pressure CVD equipment, supporting the formation of controlled interface layers on silicon wafers for advanced logic and memory device fabrication. Accurate precursor dosing and rigorous impurity controls are essential due to sub-micron device geometries and reliability demands in integrated circuits (ICs).

    Industry compliance standards

    • SEMI C3.67-0316 (Specifications for Gaseous Electronic-Grade Germanium Compounds)
    • IATF 16949:2016 Automotive QMS (for automotive-grade IC manufacturing)
    • IEC 60749 (Semiconductor devices – Mechanical and Climatic Test Methods)
    • RoHS 3 (Restriction of Hazardous Substances Directive for electronics)

    Typical usage ratio

    • Precise precursor flow rates ranging from 0.1–2.5 sccm (standard cubic centimeters per minute) per reactor channel, with optimization based on target film thickness and deposition temperature profile; excessive dosing above process window is avoided to prevent particle contamination.

    Downstream process integration

    • The material vaporizes and enters CVD/ALD chambers, reacting at controlled temperatures (typically 300–450°C) in proximity to silicon substrates for layer-by-layer germanium film growth as part of front-end wafer processing.

    Final product types

    • Monolithic integrated circuits (logic, memory, RF ICs)
    • Photonic and optoelectronic structures (Ge-on-Si photodetectors, avalanche photodiodes)
    • Advanced CMOS nodes and FinFET semiconductor wafers

    2. Photovoltaic Cell Manufacturing—Multijunction Solar Absorber Layers

    Manufacturers of high-efficiency photovoltaic cells use Tetra-N-Butylgermane as a key Ge source for vapor deposition of absorber layers in triple-junction and advanced tandem solar cell architectures. The accurate supply of germanium atoms improves light absorption and lattice compatibility, helping maximize conversion rates for aerospace and high-value terrestrial PV modules where cell uniformity and device longevity are paramount.

    Industry compliance standards

    • IEC 61215 (Crystalline Silicon Terrestrial Photovoltaic Modules – Design Qualification and Type Approval)
    • IEC 62670 (PV Concentrators - Performance Testing)
    • UL 1703 (Standard for Flat-Plate PV Modules and Panels)

    Typical usage ratio

    • Precursor injection levels are typically set between 0.3–1.1 sccm per growth chamber—precisely adjusted according to substrate dimensions and absorber layer thickness in MOVPE (metal-organic vapor phase epitaxy) or MOCVD (metal-organic chemical vapor deposition) systems.

    Downstream process integration

    • The compound enters MOVPE/MOCVD reactors during the sequential epitaxial deposition of Ge layers onto III-V semiconductor substrates, supporting the “bottom cell” foundation in multijunction device stacks.

    Final product types

    • Triple-junction solar cells for satellite and space applications
    • Tandem solar panels for high-concentration photovoltaic fields
    • Specialized GaAs/Ge heterojunction PV modules

    3. Infrared Optical Materials—Infrared Transparent Coatings

    IR optics fabrication industries depend on Tetra-N-Butylgermane for the controlled deposition of germanium-based coatings on infrared optical elements—such as lenses, windows, and prisms—used in thermal imaging and spectroscopy systems. These coatings provide high refractive indices and tune surface transmission properties, essential for demanding military and scientific instrument applications which require stable, high-purity material characteristics.

    Industry compliance standards

    • ISO 10110-1:2006 (Preparation of drawings for optical elements and systems – Material and Coatings)
    • MIL-PRF-13830B (US Military – Performance Specifications for Optical Components)
    • REACH Registration (for safe handling in EU coatings manufacturing)

    Typical usage ratio

    • 0.2–1.0 sccm of Tetra-N-Butylgermane vapor per deposition run, optimized according to required coating thickness (70–300 nm) and optical device geometry; dosing tailored to eliminate absorption edge artifacts in IR spectra.

    Downstream process integration

    • Vapor-phase deposition within high-vacuum or atmospheric CVD chambers to form dense, low-defect germanium coatings as a post-polishing stage on IR-transparent substrates.

    Final product types

    • Infrared camera optics for surveillance and industrial thermography
    • Beam splitters and attenuators for IR spectroscopy
    • Military-grade night vision lenses

    4. Specialty Glass and Optical Fiber—Germanium Doping of Silicate Glass

    Specialty glass manufacturers utilize Tetra-N-Butylgermane as a controlled dopant during the vapor-phase doping of silica preforms for high-index optical fiber and advanced lens materials. Germanium content directly tunes refractive index profiles and signal transmission properties in single-mode fibers and fiber Bragg gratings. Consistency in doping level and raw material purity ensures uniform light propagation essential to telecommunications and sensing applications.

    Industry compliance standards

    • ITU-T G.652 (Characteristics of a Single-Mode Optical Fiber and Cable)
    • ISO 11801 (Generic Cabling for Customer Premises)
    • IEC 60793-1 (Optical Fibres – Measurement Methods and Test Procedures)

    Typical usage ratio

    • Vapor phase dosing between 0.05–0.12 mol% relative to SiO₂, with precision metering to match optical fiber performance grade and application; dosage varies by targeted numerical aperture and attenuation requirements.

    Downstream process integration

    • Material is introduced as a vapor in the MCVD (Modified Chemical Vapor Deposition) or OVD (Outside Vapor Deposition) process for core and cladding doping of silica preforms prior to fiber drawing.

    Final product types

    • Single-mode and multimode optical fibers for telecom
    • Fiber Bragg gratings for sensing and filtering applications
    • High-index glass lenses for micro-optics and photonic circuits

    5. Compound Semiconductor Device Fabrication—Ge Source in Epitaxial Layer Engineering

    Producers of compound semiconductor devices integrate Tetra-N-Butylgermane as a key source of germanium atoms in the engineering of heterostructures for high-electron-mobility transistors (HEMTs), quantum well lasers, and advanced detector arrays. Precision in Ge layer growth supports lattice-matched interfaces and enhanced carrier mobility crucial to device miniaturization and performance in telecom and defense electronics.

    Industry compliance standards

    • JEDEC JESD22-B101E (Mechanical Shock Test Method for Semiconductor Devices)
    • ANSI/ESD S20.20 (ESD Control Program for Device Manufacturing)
    • RoHS 3 for electronic components

    Typical usage ratio

    • Standard injection rates between 0.2–0.8 sccm per epitaxial growth channel, modulated according to quantum well thickness and bandgap engineering targets in MBE (Molecular Beam Epitaxy) and MOCVD reactors.

    Downstream process integration

    • Utilized during the controlled vapor-phase epitaxial formation of Ge buffer and channel layers atop GaAs or InP substrates to support heterostructure assembly in the device active region.

    Final product types

    • High-frequency HEMT power amplifiers
    • Quantum cascade lasers
    • Infrared and X-ray detector arrays for security and medical imaging
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    Certification & Compliance
    More Introduction

    Tetra-N-Butylgermane: Bringing New Purity and Reliability to Germane Chemistry

    Our Perspective as the Manufacturer

    Tetra-N-Butylgermane keeps showing its value in several high-tech applications, especially in the ever-advancing semiconductor industry. For those of us who have spent years in chemical production plants, the value of this molecule isn’t about buzzwords or pageantry—it’s about practical results. We work hands-on with every batch. Each run demands the same attention as the last, sometimes more, simply because the smallest oversight can ripple into downstream effects for our clients. From synthesis to shipping, maintaining purity and batch consistency is what we focus on every day.

    Hard Numbers, Real Performance

    Over the last decade, research and industry demand for germanium compounds, including Tetra-N-Butylgermane, have grown sharp. We followed this trend closely, and our plant responded with expanded purification lines, tighter quality assurance, and analytical improvements tailored for this class of chemicals. For our current model of Tetra-N-Butylgermane, we standardize on a purity of at least 99.9%, meeting—and often exceeding—requirements from both established electronics giants and innovative emerging companies. Gas chromatography-mass spectrometry backs every certificate of analysis, tied directly to lot traceability. We implement Karl Fischer titration and rapid infrared checks on every packed drum. The difference is not just in the number but in the measured absence of impurities like organochlorides and siloxanes, which can trigger issues in vapor deposition and thin film formation.

    Building for the Needs of Modern Manufacturing

    Fabricators and R&D labs share a particular set of priorities: they want chemicals that do the job predictably batch after batch. Tetra-N-Butylgermane brings defined reactivity with improved handling compared to traditional liquid germane sources, especially germane gas, which poses much larger logistics and safety challenges. Our product stays stable under controlled environments, so it’s easier to store and ship, and it avoids the volatility that drives up insurance costs and regulatory paperwork. Our customers using atomic layer deposition or chemical vapor deposition find fewer headaches with our Tetra-N-Butylgermane because of its precisely consistent vapor pressure and low residual contamination risk.

    We oversee the whole chain—from raw germanium metal selection to alkylation, distillation, and packing. The outcome is not just a registered CAS number but a chemical that allows customers to scale from pilot to full production without complex revalidation. We watch how every drum behaves over time, and more than once, we’ve tracked performance down to the lot number in feedback from our fabrication partners, then adjusted our conditions. This loop tightens both our standards and the reliability of the finished materials our customers make, whether those are advanced semiconductors, novel photovoltaic cells, or specialty polymers.

    Where Tetra-N-Butylgermane Stands Apart

    Plenty of new users wonder what distinguishes Tetra-N-Butylgermane from other alkylgermanes, like tetramethylgermane or tetraethylgermane. Lab tests and real-world data point to a couple of decisive differences. The butyl groups in this molecule create a balance between volatility and manageable reactivity: enough to make atomic layer or chemical vapor deposition efficient but not so high that process engineers worry about runaway reactions or rapid off-gassing. We worked with partners performing device encapsulation and patterned deposition, and the feedback consistently showed lower background contamination in device films compared to shorter-chain analogs. Broader alkyl groups mean reduced undesired sub-reactions during high-temperature or plasma-based processes.

    Compared to germane gas, which is still widely used in semiconductor doping and thin film work, Tetra-N-Butylgermane sidesteps the extreme hazards, high-pressure storage, and specialized transportation. Our production teams remember the older days of handling germane cylinders—no one misses that learning curve or the increased oversight needed to guarantee safe workplace air. Loading, metering, and waste management become much more straightforward with this liquid germane source, and facilities can often retool existing lines instead of investing in wholly new setups.

    Meeting the Challenge of Purity and Supply

    Years in the chemical manufacturing business have left us sensitive to the frustration of a promising product that loses pace because of erratic supply. We’ve invested early in supply chain integration for germanium feedstocks, including relationships with miners and refiners, to keep consistency going even as demand tightens globally. All purification steps, from vacuum distillation to inert transfer, take place on the same site under our direct oversight, so we don’t get caught out by third-party fluctuations or bottlenecks.

    To ensure rapid qualification and audit-readiness, every consignment includes a data package with spectrographic and chromatographic assurances—not just claims. Over the years, customers have told us that being able to match analytical profiles from lot to lot lets them focus on process improvements and device scaling, not on chemical troubleshooting. Lags in delivery or unexplained inconsistency waste more than time—they force engineers to redo months of validation. We build redundancy into our upstream sourcing and maintain real-time tracking on all raw materials, so we honor committed lead times and keep lines moving for our customers.

    Typical Uses and Successes in Industry

    The largest slice of Tetra-N-Butylgermane today goes into chemical vapor deposition for semiconductors, especially in advanced node device fabrication. Several of our major clients have replaced both germane gas and other organogermane liquids because of smoother process windows in low-pressure CVD chambers. During trials, growth rate and film uniformity hit target specifications faster and with less calibration than with tetramethyl- or tetraethyl versions. Reports from device engineers point to less equipment fouling, longer chamber uptime, and improved yields in high-volume manufacturing.

    Tetra-N-Butylgermane also finds use as a specialty intermediate for organometallic synthesis, often in research settings where teams require highly selective germanium transfer. Our product’s purity mitigates many of the unexpected side reactions that slow down pilot and scale-up projects. Labs focusing on innovative solar cell materials and next-generation OLEDs are leveraging Tetra-N-Butylgermane for prototype runs because they can target new device architectures without chemical interference from trace contaminants.

    Safety, Handling, and Practical Experience

    Experience in chemical manufacturing underscores the distinction between what looks good on paper and what works on a plant floor or in a commercial lab. Tetra-N-Butylgermane is less hazardous than germane gas, which can be pyrophoric and acutely toxic. Handling the liquid form in modern chemical lines still demands full protective measures, including inert atmosphere manipulation, but it offers a margin of practical safety our operators appreciate. All tanks and drums undergo nitrogen blanketing from the moment of fill, and shipments take place in pressure-rated, pre-conditioned containers. Over several years, our safety dashboards show a dramatic drop in exposure incidents and near-misses related to our Tetra-N-Butylgermane compared with previous hazardous gases. Shipping compliance processes also simplified; many customers scaled up procurement after easier integration into their EH&S programs.

    Waste streams from processing and disposal produce a manageable footprint. Our in-house environmental engineers regularly audit the recovery and neutralization steps, ensuring byproducts stay within discharge limits. This has helped several large users meet stricter site certifications, especially as local and national authorities tighten regulations.

    Supporting Innovation and Scale

    Supply chain reliability matters most when customers move from pilot to mass production. We structure contracts and inventory buffers so users can plan process scaling without last-minute shortages or unanticipated price fluctuations. Over the past ten years, we’ve responded dynamically to new use cases, whether it’s a silicon foundry demanding metric tons for consistent runs or a university needing small-volume, ultra-pure material for a breakthrough research project. Large or small, the same standards and test protocols apply.

    Our technical teams worked one-on-one with circuit manufacturing clients troubleshooting residue issues, refining vaporization protocols, and optimizing delivery modules. This support extends past sales, because our reputation depends directly on our user’s long-term results. Both in person and virtually, our scientists and engineers track field performance, refine application notes, and push for process improvements with each customer’s individual requirements in mind.

    Comparing Tetra-N-Butylgermane to Other Organogermanium Compounds

    Tetra-N-Butylgermane fits a specific slot in the broader germanium chemistry world. Tetramethylgermane and tetraethylgermane see occasional use in depositions, but their higher volatility means the margin for error is narrower, both in handling and vapor delivery. In deposition trials, Tetra-N-Butylgermane demonstrates reduced precursor decomposition on chamber walls and greater yield consistency. Our team ran parallel CVD runs with both products during early incoming evaluation; the butyl-based precursor yielded lower carbon residue and clearer endpoint signals. These are not just lab statistics—they translate into less chamber downtime and higher first-pass device success rates during actual manufacturing.

    Longer alkyl chains in Tetra-N-Butylgermane confer higher boiling points and lower vapor pressures, compared to methyl- or ethyl-based analogs. This lets process engineers set up broader operation windows and safer transport, critical in multi-shift continuous-process plants where reliability is the backbone of profitability. We’ve completed dozens of side-by-side field comparisons, and each one reinforces our confidence in both product and process control.

    Feedback and Continuous Improvement

    We collect user experience and bring it back to R&D. More than once, feedback led to real changes—from tweaking distillation column settings to modifying drum linings for longer transportation times. We keep communication open: if a customer faces a new challenge, our technical and production staff connect quickly, diagnose the root cause, and adjust either manufacture or logistics. This loop doesn’t just keep customers satisfied—it pushes us to higher standards.

    Plant tours for prospective buyers, transparent sharing of lot histories, and third-party audits—these practices are routine for us. We believe chemical manufacturing is a partnership built on shared evidence and direct feedback, not just certificates or glossy brochures. Our approach is to demonstrate product quality and supply dependability with real-world data from client usage across fields: microelectronics, specialty materials, optoelectronics, and energy research. Demand cycles change, but our grounding in on-site experience prepares us for shifts in scale and spec.

    Addressing Challenges Moving Forward

    Chemical manufacturers see both peaks and valleys, from raw material shortages to abrupt rises in demand. Our supply team actively scouts secondary sources and keeps open relationships with multiple refiners, building in redundancy that sidesteps single-point failures in our Tetra-N-Butylgermane supply. For global customers, logistical complexity grows, both in documentation and in physical movement, so we invested in automated tracking systems and pre-approved customs protocols to keep material moving without unexpected delay.

    Anti-counterfeiting has also become more important as this category of fine chemicals draws increased commercial interest. Each shipment includes both overt and covert tagging, with direct lot authentication accessible to users. One missed delivery or one instance of product substitution can have million-dollar downstream effects for a semiconductor plant, so we keep our protocols tough and verifiable.

    Environmental Stewardship and Sustainability

    We take environmental compliance as a daily duty, not a tick-box exercise. Internal recycling and scrubbing systems keep solvent and byproduct emissions below regulatory ceilings, and every run gets logged for review. Audit teams—both internal and accredited third parties—access all records on demand. For many of our clients with public sustainability targets, our documentation provides a solid backbone for site-level emissions reporting. Tetra-N-Butylgermane production byproducts, handled with care, form a relatively compact waste stream, making final disposal and treatment less complex than for some other organometallic precursors. We invest in continuous upgrades to our scrubbers and waste handling because the cost of neglect shows up quickly in regulatory fines and lost customer confidence.

    Looking Ahead with Tetra-N-Butylgermane

    As device feature sizes shrink and new process techniques emerge, the pressure on chemical inputs only increases. Our team routinely works months in advance, analyzing customer forecasts and collaborating on prequalification studies for novel deposition equipment designs and film compositions. This preparation—rooted in practical manufacturing experience—lets us keep pace with next-generation needs without cutting corners on safety or supply stability.

    Tetra-N-Butylgermane’s place in the market continues to expand not just because of spec sheets, but due to the lived experience from labs, plants, and R&D centers. Reliable supply, thorough quality control, and responsive support remain at the center of how our product integrates into critical manufacturing chains. Every batch draws on years of technical learning, attention to detail, and honest feedback from end users. We see our work in each successful device, each shipped product, and every research milestone crossed with a little less chemical risk and a bit more certainty.