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Cadmium Arsenide

    • Product Name Cadmium Arsenide
    • Alias Cadmium diarsenide
    • Einecs 215-116-9
    • Mininmum Order 1 g
    • Factory Site Tengfei Creation Center,55 Jiangjun Avenue, Jiangning District,Nanjing
    • Price Inquiry admin@sinochem-nanjing.com
    • Manufacturer Sinochem Nanjing Corporation
    • CONTACT NOW
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    Specifications

    HS Code

    830381

    Chemical Formula Cd3As2
    Molar Mass 406.08 g/mol
    Appearance Grayish-black metallic solid
    Density 6.98 g/cm³
    Melting Point 716 °C
    Band Gap Semimetal (zero/very small bandgap)
    Crystal Structure Tetragonal
    Cas Number 12006-15-4
    Solubility In Water Insoluble
    Toxicity Highly toxic
    Magnetic Properties Diamagnetic
    Thermal Expansion 16.2 × 10⁻⁶/K
    Boiling Point Decomposes before boiling
    Electrical Conductivity High (semimetallic behavior)
    Main Applications Electronic and thermoelectric materials

    As an accredited Cadmium Arsenide factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.

    Packing & Storage
    Packing Cadmium Arsenide, 100 grams, is supplied in a sealed amber glass bottle with hazard labels, packed inside a protective carton box.
    Shipping Cadmium Arsenide should be shipped in tightly sealed containers, protected from moisture and physical damage, and clearly labeled as hazardous. Transport must comply with local, national, and international regulations for toxic and environmentally hazardous substances, using appropriate UN packaging. Only trained personnel should handle loading and unloading to minimize exposure risks.
    Storage Cadmium arsenide should be stored in a tightly closed container, away from incompatible substances such as strong acids, oxidizers, and moisture. Keep it in a cool, dry, well-ventilated area, ideally within a dedicated, clearly labeled toxic chemical storage cabinet. Handle only with appropriate personal protective equipment and follow all relevant safety protocols due to its toxicity and potential health hazards.
    Application of Cadmium Arsenide

    Applications of Cadmium Arsenide in Industrial Manufacturing

    As a direct producer of cadmium arsenide, we supply this specialty material to leading downstream sectors where its distinct semiconductor characteristics enable targeted performance advantages. Below, we outline the industrial applications where this compound plays a critical technical role, with an emphasis on authentic use, relevant regulations, and production practice.

    1. Infrared Detector and Sensor Manufacturing

    Cadmium arsenide serves as a narrow bandgap semiconductor in the fabrication of high-sensitivity infrared (IR) detectors and sensor arrays. Manufacturers rely on its unique electron mobility and strong response to infrared wavelengths for devices deployed in scientific instrumentation, defense imaging, industrial inspection, and thermal mapping. This raw material is processed into single crystals or thin films through controlled techniques to achieve precise electronic properties essential for downstream detector production.

    Industry compliance standards

    • RoHS Directive (Restriction of Hazardous Substances, EU 2011/65/EU with applicable exemptions for II-V semiconductors)
    • IEC 60747-5 (Semiconductor devices—Discretes and integrated sensors)
    • REACH Regulation (EC) No 1907/2006: Candidate List Compliance and safety documentation
    • U.S. Department of Defense MIL-PRF-19500 (Performance specification for semiconductor devices, applicable to military sensor programs)

    Typical usage ratio

    • Core substrates or thin film layers comprise 10–100% of the detector’s semiconducting region, depending on array architecture and detection wavelength; loadings are tuned according to quantum efficiency and pixel density requirements.

    Downstream process integration

    • Raw material undergoes zone refining and Bridgman or Czochralski crystal growth for bulk detectors, or molecular beam epitaxy (MBE) for thin-film device stacks, before photolithographic device fabrication and encapsulation phases.

    Final product types

    • Infrared focal plane arrays
    • Thermal imaging sensors
    • Photon counters for scientific instrumentation
    • IR spectrometer array chips

    2. Terahertz Electronics and Imaging Components

    Owing to its exceptionally high room-temperature electron mobility, this material is crucial in the emerging field of terahertz (THz) electronic components. Advanced research and pilot-scale industrial lines use it for fabricating field-effect transistors and waveguides in terahertz imaging, wireless communications, high-speed data links, and medical diagnostics. Device firms specifically select it for heterostructure channels and photoconductive switches to maximize carrier transport in high-frequency circuitry.

    Industry compliance standards

    • IEEE 1650 (Standard for Terahertz Electronics)
    • IEC TC 47 (Semiconductor Devices)—Device safety and quality certification
    • RoHS exemptions for R&D and professional-grade sensors
    • ISO 9001-certified quality management for device manufacturing lines

    Typical usage ratio

    • Active channel layers use 5–40% cadmium arsenide by device volume; lower concentrations apply in composite THz structures, while photoconductive sensor elements may use higher ratios for maximum THz coupling.

    Downstream process integration

    • Integrated via molecular beam epitaxy or pulsed laser deposition onto device substrates, followed by microfabrication (etching, metallization, passivation) and wafer-scale testing for high-frequency applications.

    Final product types

    • Terahertz photodetector chips
    • Ultra-fast field-effect transistors (FETs)
    • THz imaging elements for security and non-destructive evaluation
    • Pilot run THz oscillators and transmitters

    3. Quantum Material Research and Device Prototyping

    This compound is a leading platform for fundamental research and device prototyping in quantum materials, due to its Dirac semimetal characteristics and ultra-high electron mobility. University and industrial R&D centers employ it for the synthesis of experimental field-effect devices, non-linear optical components, and quantum Hall effect structures. As a supplier, we deliver high-purity crystals or thin-film sources tailored to custom device geometries, often fulfilling strict analytical documentation for reproducible results in grant-funded and private research laboratories.

    Industry compliance standards

    • ISO/IEC 17025:2017 (Testing and calibration laboratory requirements for materials characterization and supply)
    • ASTM F76 (Standard Specification for II-VI Semiconductor Materials including bulk and epitaxial wafers)
    • Individual institutional guidelines for hazardous material handling and safe research use
    • Support for traceability and purity certification to 99.999% (5N) or higher, as required by downstream device programs

    Typical usage ratio

    • Pure crystals or layers used at 100% concentration as the primary quantum-active component; thin film research sometimes blends with topological insulator layers, with ratios adjusted to study interface effects.

    Downstream process integration

    • Culminates in nonlinear lithography, electron-beam writing, annealing, and ultra-high vacuum deposition as standard steps in device prototyping or materials testing.

    Final product types

    • Single electron transistors
    • Quantum Hall test platforms
    • Dirac/Weyl semimetal experimental chips
    • Custom quantum research wafers for published scientific results

    4. Infrared Transparent Electrode Materials for Optoelectronic Modules

    Cadmium arsenide integrates in specialized optoelectronic module production as a transparent electrode material, particularly where standard ITO or ZnO conductors lack required transparency in the infrared spectrum. Industrial device lines processing IR emitters, night vision modules, or optical communication components use this material for functional layers to balance electrical conductivity with spectral transparency. Deposition method and purity are tailored to end performance targets in branded commercial and defense products.

    Industry compliance standards

    • IEC 61249-2-41 (Materials for printed boards and other interconnecting structures—Infrared transparent conductors)
    • ASTM F1461 (Standard specification for transparent conductive coatings on glass and plastics)
    • RoHS compliance extended under military and aerospace exemption codes for professional IR devices
    • In-house QA cyclic testing to MIL-STD-810 (Environmental Engineering Considerations and Laboratory Tests)

    Typical usage ratio

    • Thin-film electrodes typically contain 70–95% cadmium arsenide as the conductive layer, with thicknesses ranging between 100 nm and 2 μm, adjusted by target transmission and sheet resistance specifications.

    Downstream process integration

    • Direct vapor deposition onto IR transmitting substrates (germanium, chalcogenide glasses) following substrate cleaning, preceding encapsulation or anti-reflection coating steps in the final assembly line.

    Final product types

    • Night vision device electrodes
    • IR emitter module coatings
    • Transparent contacts in laser and photodiode assemblies
    • Optical communication circuit elements
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    Certification & Compliance
    More Introduction

    Cadmium Arsenide: Precision Materials for Advanced Technology

    Understanding the Role of Cadmium Arsenide in Modern Industries

    From decades of refining specialty compounds, we have learned that selection of materials shapes both process outcomes and breakthroughs at scale. Cadmium Arsenide (Cd3As2) stands out not because it is ordinary, but because it supports a class of advanced electronics projects where typical semiconductors hit their limits. When customers reach out about high-mobility materials with quantum efficiency, this name crops up fast. Our production practices focus on clarity of structure, purity, and batch reproducibility because the research community, device engineers, and solution developers expect predictability down to the atomic level.

    Model Insights and Material Consistency

    Our standard model of Cadmium Arsenide focuses on powder or single-crystal forms with tailored purity for low-defect performance. Experience reveals that the smallest contaminant will distort electronic behavior, so all lots undergo closed-system processing, inert gas control, and rigorous analytical review—think ICP-MS and XRD—before shipping. We control arsenic-to-cadmium ratios precisely to discourage phase separation, which could disrupt topological insulation or alter carrier mobility. Each batch comes with documented crystalline orientation for those integrating material into wafer growth or quantum transport studies. Point-to-point consistency is not just preferred—customers demand it. Our model portfolio includes several crystallite sizes, allowing selection according to dimensional confinement, thin-film deposition needs, or bulk synthesis pathways. We offer lot sizes tailored for university research or pilot-scale device trials; our own technical staff started with benchtop runs before scaling, so we understand these evolving needs well.

    Pound-for-Pound: Why Cadmium Arsenide Surpasses Others for Topological Materials

    Over years of feedback from device labs and research consortia, it has become clear that Cadmium Arsenide opens doors where silicon, indium arsenide, or gallium arsenide reach natural physical bottlenecks. Cd3As2 exhibits extremely high electron mobility thanks to its Dirac semimetal characteristics. This means less energy lost as heat, sharper switching characteristics, and stable surface states even at low temperatures. Traditional III-V semiconductors do not maintain these Dirac points in their band structures, so they cannot support the same level of topological phase exploration.

    Customers working on quantum devices, such as next-generation transistors or sensors, request our Cadmium Arsenide specifically for its ability to support spin-orbit coupling effects unexplored with competing materials. Synthetic graphene and alternative 2D compounds often fall short on robustness or long-range order, while Cd3As2 crystals maintain structural integrity across thin films and bulk applications. Over ten years, we compared wafer uniformity and growth fault rates for other arsenides and witnessed first-hand how subpar handling or impure batches quietly kill weeks of progress. Our own empirical data shows well-prepared Cadmium Arsenide offers lower defect densities under identical processing conditions versus other vendors’ antimonide or telluride analogs.

    Usage Across the Research and Industrial Landscape

    Most commonly, our Cadmium Arsenide flows into fields exploring quantum mechanics made practical: topological insulators, quantum spin Hall devices, and nanowire or nanoribbon construction. Users in university labs cite the consistent layer-by-layer epitaxial growth for transistors, or for creating nanojunctions that form the basis of quantum logic circuits. Some customer teams probe the interplay of magnetic fields and charge carriers; these experiments rely on precise magnetoresistance measurements, which only come through uniformity in crystal growth—not all arsenides deliver this level of stability.

    In optoelectronics, Cd3As2 finds extensive application in infrared detectors and fast photodetector devices, owing to a narrow but direct bandgap. Our feedback loop with device manufacturers challenges us to keep batch impurities below strict detection limits. Out-of-spec trace metals or moisture inclusions can reduce output efficiency or shorten mean device lifetime. Only with controlled purity, verified analytically on-site, can these challenges be systematically addressed.

    Some more advanced uses drift into the border area between applied physics and early-stage engineering—think quantum computing elements or chemical sensors exploiting the topological stability of Dirac fermions intrinsic to this compound. Unlike traditional silicon, which suffers fast decoherence or loss of quantum state at practical device scales, Cadmium Arsenide supports robust phenomena critical for error correction and reliable logic operations at nanoscales.

    Medical device engineers and sensor developers have explored Cd3As2 for specialized detectors, benefiting from its sensitivity under X-ray or gamma radiation. Many of these uses require not just chemical purity, but also consistent response under prolonged operation. We run real-time durability screening and feedback data from client facilities into our next synthesis cycles, letting lived experience drive refinement.

    Working with Cadmium Arsenide: Practical Considerations from the Plant Floor

    Handling and preparation involve strict adherence to established safety protocol. Arsenic and cadmium both demand respect and rigorous attention—years ago, we learned the hard way how not following best practice during synthesis or grinding operations leads to excessive waste or exposure risk. For every production shift, protective barriers, negative-pressure enclosures, and automated transfer tracks keep staff and material separated. Over time, these investments mean lower occupational health incidents and higher confidence in final output.

    Quality checks cover more than a quick visual or basic spectroscopic scan. We run particle size analysis with dynamic light scattering, track vapor phase composition, and confirm phase purity against standard references. This prevents downstream surprises—one research partner once unknowingly exposed an entire multi-million-dollar device prototype line to contaminated input material from another supplier, resulting in irreparable structural errors. Consistency from our plant means their lines stay operational.

    Transport and storage use sealed vessels under inert argon to avoid oxidation, as even minute exposure to atmospheric oxygen or water vapor alters electronic and chemical behavior. Many research outfits, especially those exploring large-area device fabrication, prefer sealed ampoule delivery and laboratory integration tools designed for glovebox environments. These practices maximize shelf life and uphold batch reliability months after initial delivery.

    Comparing to Other Materials: What We’ve Learned Over Decades

    Device physicists often begin with more widely known semiconductors before discovering the unique window Cadmium Arsenide offers. In thermal or mechanical reliability, some traditional III-V compounds may withstand harsher environmental shifts, but none duplicate the specific quantum transport properties seen in Cd3As2. Gallium or indium-based arsenides offer familiar processing routes but reach limits in applications demanding massless Dirac fermions for topological electronic states.

    Our own product line includes a stable of alternatives—InAs, CdTe, GaAs—all valuable for their respective applications. Yet, requests for complex device prototyping or quantum software integration are increasingly pointing directly at Cadmium Arsenide. Researchers pushing the envelope in nonvolatile memory, spintronic devices, or experimental superconductivity studies lean on this material because conventional arsenides or antimonides have not demonstrated comparable agility.

    Questions about environmental and occupational risk persist in every review. Cadmium and arsenic rank as persistent pollutants. We took a hard look at process emissions, capture rates, and product reclamation. Our in-house recycling flow recovers both metals from all off-spec or expired material, achieving a greater than 95% reclamation rate. Site audits and material-tracking protocols keep stock secure from cradle through final application or disposal.

    Supplier Perspective: The Demands of Modern Electronic and Quantum Technologies

    We do not just ship product and step back. Part of our job is understanding shifts in device design, newly published quantum transport papers, or next-generation process integration. When industry pivots towards devices needing stable Dirac nodes, or shifts architectural focus to two-dimensional and layered structures, our production teams adapt recipes to optimize crystallite orientation or to minimize dislocation density. These back-and-forths with the R&D community go a long way in shaping what comes off our line. For example, phosphor doping studies or examination of alloying behavior with selenium brought us into collaboration with material science teams, refining post-synthesis purification steps based on real-world device integration feedback.

    We keep close connections with universities, commercial scientific facilities, and early-stage hardware startups. By providing not only the base material but also technical data, post-synthesis support, and logistics solutions tailored to glovebox or cleanroom needs, we deepen trust. When a customer calls about an outlying result or seeks to scale a prototype into a larger batch, we troubleshoot, suggest process modifications, and sometimes modify our in-plant protocols to align with new, proven scientific findings.

    The shared goal goes beyond transactions; both sides seek reliable advancement and reproducibility. Device failure tracked back to contaminated or mischaracterized material wastes more than raw input cost—it shuts down research programs, delays innovation, and inflates costs. In measuring, reporting, and flagging every process parameter, we give research and device partners the transparency they demand. This approach builds reputation—not just selling a kilogram of compound, but creating a bridge from base science to functional technology.

    Meeting Evolving Demands: Challenges and Solutions in Materials Supply

    Many labs explore shrinking device scales. As components drop below the micron mark, demands for uniform, single-orientation Cadmium Arsenide surfaces intensify. Tiny inclusions or grain boundaries disrupt device physics in unpredictable ways. We invest in equipment upgrades, process audits, and the latest analytical technology because those with an eye on quantum computer applications or next-generation detectors will not settle for batch-to-batch fluctuation. Wafers for quantum Hall effect research, for example, must present a smooth topography and consistent carrier density. Any deviation stands out quickly in precision tests.

    Feedback from superconductivity and nanoelectronics teams has pushed our understanding of the role of tiny impurity clusters and dislocation stacking faults. By tracing problems back to earlier process steps, we adjusted precursor purification strategies and crystallization regime controls. With every new study revealing device-defining traits, whether thermal conductivity, carrier density, or even surface plasmonic resonance, we use new data to continuously refine control parameters in real-world, working conditions.

    Another significant challenge has been scaling supply to meet both boutique research orders and broader industrial demand. Producing too much runs the risk of shelf-life overshoot—even in sealed environments, long-term storage can affect purity and form. By working closely with frequent buyers, we predict upcoming needs, adjust production cycles, and rapidly redistribute inventory to avoid downtime.

    The safety and regulation landscape for toxic elements changes; we track compliance standards across every major market and adjust labeling, handling, and documentation practices accordingly. This means not only responding to current rules, but proactively designing packaging and transit safeguards that anticipate future requirements—a responsibility we carry both to the environment and the end users’ teams.

    What Future Opportunities and Risks Look Like

    Interest in devices harnessing topological characteristics and quantum phase stability continues to grow. Global demand now stretches from academic physics departments to prototype fabs constructing the next generation of nonvolatile memory and field-based quantum computers. Material advances underpin those leaps, and Cadmium Arsenide plays an irreplaceable role.

    We prepare for greater scrutiny as sustainability and lifecycle assessments sharpen. End-of-life and waste management questions motivate cross-industry discussions and product stewardship efforts. Collaborating with device manufacturers, recyclers, and regulatory agencies, we take a full-scope approach to tracing material flow and closing recycling loops.

    Products like ours face reputational risks when bottom-of-barrel trading or counterfeit batches leak into the market. Our traceability system lets labs authenticate source and ensure chain-of-custody all the way from raw precursor intake to final shipment. This provides assurance to both newcomers and established players that their investment in research or commercial product lines will not be undermined by substandard supplies.

    We work to keep ahead of supply disruptions. Securing reliable arsenic sources for synthesis, contingency planning for energy fluctuations, and keeping a robust trained technical staff all help insulate our partners from market volatility or sudden delivery interruptions. Unsurprisingly, the demands of a global technology market reward adaptability and deep technical commitment over short-term, transactional approaches.

    Elevating Science Through Reliable Materials

    Research breakthroughs, commercial device launches, and scalable manufacturing all rely on foundation components that do not waver from claimed performance. Cadmium Arsenide, for decades a specialty product, now sits at the intersection of quantum technology, advanced detection, and high-speed electronics. Our experience shows that delivering useful, predictable, and well-documented product shapes client confidence and scientific progress. As applications diversify and the field matures, we will continue refining each link from batch synthesis to final implementation, supporting more robust, efficient, and groundbreaking technologies—the ones that move from paper to proof-of-concept to production.