Purity 99.999%: Zinc Arsenide of 99.999% purity is used in infrared photodetectors, where it ensures high signal sensitivity and minimal background interference.

Band Gap 1.0 eV: Zinc Arsenide with a 1.0 eV band gap is used in photovoltaic cells, where it enhances photoelectric conversion efficiency.

Crystal Structure (Cubic): Zinc Arsenide with a cubic crystal structure is used in semiconductor laser diodes, where it provides uniform lattice properties and stable laser emission.

Melting Point 950°C: Zinc Arsenide featuring a melting point of 950°C is used in high-temperature thermoelectric devices, where it offers reliable operation and material integrity.

Particle Size <1 μm: Zinc Arsenide with particle size less than 1 μm is used in thin-film transistors, where it allows for smooth film formation and high device performance.

Stability Temperature up to 400°C: Zinc Arsenide stable up to 400°C is used in microwave electronic components, where it maintains consistent electronic properties under thermal stress.

Doping Level (n-type, 1017 cm⁻³): Zinc Arsenide with n-type doping of 1017 cm⁻³ is used in electronic junction fabrication, where it promotes controlled electrical conductivity.

Low Defect Density (<104 cm⁻²): Zinc Arsenide with a defect density below 104 cm⁻² is used in optoelectronic substrates, where it supports efficient carrier transport and device reliability.

Carrier Mobility >300 cm²/V·s: Zinc Arsenide with carrier mobility greater than 300 cm²/V·s is used in high-speed integrated circuits, where it enables rapid electronic switching.