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HS Code |
448804 |
| Chemicalname | Tungsten Hexafluoride |
| Chemicalformula | WF6 |
| Molarmass | 297.83 g/mol |
| Appearance | Colorless gas |
| Density | 3.44 g/L (gas at 0°C, 1 atm) |
| Meltingpoint | -2.2°C |
| Boilingpoint | 17.1°C |
| Solubilityinwater | Reacts with water |
| Vaporpressure | 16.7 kPa at 20°C |
| Casnumber | 7783-82-6 |
| Odor | Pungent |
| Reactivity | Highly reactive with moisture |
As an accredited Tungsten Hexafluoride factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | A 1-liter steel cylinder, clearly labeled "Tungsten Hexafluoride," features corrosion-resistant, high-pressure fittings and appropriate hazardous material warnings. |
| Shipping | Tungsten Hexafluoride is shipped in high-pressure, corrosion-resistant cylinders due to its toxicity and reactivity with moisture. Containers must be tightly sealed and clearly labeled. During transport, strict hazardous material regulations apply, including specialized handling, ventilation, and emergency procedures to mitigate the risk of leaks or accidental exposure. |
| Storage | Tungsten hexafluoride (WF₆) should be stored in tightly sealed, corrosion-resistant containers, typically made from stainless steel or nickel alloys. The storage area must be cool, dry, well-ventilated, and protected from moisture and incompatible substances like water and strong bases. Proper labeling, secondary containment, and access restriction are essential to ensure safe handling and prevent accidental exposure to this highly toxic and reactive gas. |
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Purity 99.9%: Tungsten Hexafluoride with 99.9% purity is used in semiconductor manufacturing, where it ensures defect-free tungsten film deposition for integrated circuits. Molecular Weight 297.83 g/mol: Tungsten Hexafluoride of 297.83 g/mol is used in tungsten chemical vapor deposition processes, where it achieves accurate layer thickness control. Stability Temperature up to 300°C: Tungsten Hexafluoride with stability up to 300°C is used in microelectronic device fabrication, where it maintains phase uniformity during high-temperature processing. Boiling Point 17.1°C: Tungsten Hexafluoride with a boiling point of 17.1°C is used in advanced patterning applications, where it provides rapid transition to vapor phase for efficient film formation. Cylinder Packaging: Tungsten Hexafluoride supplied in high-pressure cylinders is used in vacuum deposition chambers, where it allows safe and controlled gas delivery. Ultra-High Purity Grade: Tungsten Hexafluoride of ultra-high purity grade is used in large-scale VLSI production, where it limits trace metal contamination for improved device reliability. Moisture Content below 10 ppm: Tungsten Hexafluoride with moisture content below 10 ppm is used in dielectric barrier processing, where it prevents hydrolysis and degradation of surface films. Low Particle Content < 0.1 ppm: Tungsten Hexafluoride with particle content less than 0.1 ppm is used in plasma-enhanced chemical vapor deposition, where it minimizes particle-induced yield loss. Controlled Flow Rate: Tungsten Hexafluoride with controlled flow rate delivery is used in atomic layer deposition, where it enables conformal coating on complex topographies. High Reactivity: Tungsten Hexafluoride with high reactivity is used in etching processes for device isolation, where it achieves precise material removal rates. |
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