Purity 99.9%: Mercuric Arsenide with purity 99.9% is used in infrared detector fabrication, where high purity ensures optimal signal sensitivity and low noise levels.

Particle size < 5 µm: Mercuric Arsenide with particle size less than 5 µm is used in semiconductor target preparation, where uniform particle distribution improves thin film homogeneity.

Stability temperature 300°C: Mercuric Arsenide with stability temperature of 300°C is used in vacuum deposition processes, where thermal stability prevents decomposition and ensures consistent material quality.

Molecular weight 354.409 g/mol: Mercuric Arsenide with molecular weight 354.409 g/mol is used in crystal growth applications, where precise stoichiometric control facilitates defect-free lattice formation.

Melting point 290°C: Mercuric Arsenide with a melting point of 290°C is used in thermoelectric device manufacturing, where controlled melting behavior allows for efficient component integration.

Grain size 2–10 µm: Mercuric Arsenide with grain size 2–10 µm is used in sensor substrate production, where optimal grain size enhances electronic conductivity and device response time.

High crystallinity: Mercuric Arsenide with high crystallinity is used in X-ray detector materials, where superior crystal structure minimizes charge trapping and maximizes detector efficiency.