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HS Code |
118912 |
| Chemical Formula | GaAs |
| Molecular Weight | 144.64 g/mol |
| Appearance | Gray, metallic solid |
| Crystal Structure | Zinc blende (cubic) |
| Band Gap | 1.42 eV (direct, at 300 K) |
| Melting Point | 1238°C |
| Density | 5.32 g/cm³ |
| Thermal Conductivity | 55 W/m·K (at 300 K) |
| Electron Mobility | 8500 cm²/V·s (at 300 K) |
| Lattice Constant | 5.653 Å |
| Refractive Index | 3.3 (at 1.06 μm) |
| Dielectric Constant | 13.1 (static, at 300 K) |
As an accredited Gallium Arsenide factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Sealed in a 100-gram amber glass bottle, Gallium Arsenide is labeled with hazard symbols and stored in protective secondary packaging. |
| Shipping | Gallium Arsenide should be shipped in tightly sealed, corrosion-resistant containers, protected from moisture and physical damage. It must comply with all relevant regulations for hazardous materials. Label the package clearly, handle with care to avoid breakage or dust generation, and accompany it with a safety data sheet (SDS) and proper documentation. |
| Storage | Gallium arsenide should be stored in a tightly sealed container, in a cool, dry, and well-ventilated area, away from moisture and incompatible substances such as acids and oxidizers. Containers must be clearly labeled and stored away from sources of ignition. Handling should minimize dust creation, and appropriate personal protective equipment should be used. Follow local regulations for hazardous material storage. |
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High purity: Gallium Arsenide with 99.9999% purity is used in high-frequency microwave devices, where it enables low noise and high signal integrity. Crystalline structure: Gallium Arsenide single-crystal wafers are used in optoelectronic integrated circuits, where they deliver superior electron mobility for faster signal processing. Substrate thickness: Gallium Arsenide with 500 μm substrate thickness is used in LED manufacturing, where it improves mechanical strength and device longevity. Carrier concentration: Gallium Arsenide with controlled carrier concentration (1×10^18 cm^-3) is used in high-speed transistors, where it enhances switching speed and power efficiency. Doping uniformity: Gallium Arsenide with uniform n-type doping is used in photovoltaic cells, where it ensures consistent conversion efficiency across the panel area. Surface flatness: Gallium Arsenide with <1 nm surface flatness is used in quantum well lasers, where it minimizes scattering losses and enhances beam quality. Melting point: Gallium Arsenide with a melting point of 1238°C is used in high-temperature electronics, where it maintains structural stability and reliable operation. Dislocation density: Gallium Arsenide with low dislocation density (<10^4 cm^-2) is used in monolithic microwave integrated circuits (MMICs), where it improves device yield and reliability. |
Competitive Gallium Arsenide prices that fit your budget—flexible terms and customized quotes for every order.
For samples, pricing, or more information, please call us at +8615371019725 or mail to admin@sinochem-nanjing.com.
We will respond to you as soon as possible.
Tel: +8615371019725
Email: admin@sinochem-nanjing.com
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